4am17 silicon n/p channel mos fet high speed power switching ade-208-729 (z) 1st. edition february 1999 features low on-resistance n channel: r ds(on) 0.17 w, v gs = 10 v, i d = 4 a p channel : r ds(on) 0.2 w, v gs = ?0 v, i d = ? a 4 v gate drive devices. high density mounting outline 1 2 3 4 5 6 7 8 9 10 11 12 sp-12 1 g s 3 5 g 8 g 12 g 2 d 4 d 9 d 11 d s 6 s 7 s 10 1, 5, 8, 12. gate 2, 4, 9, 11. drain 3, 6, 7, 10. source
4am17 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit nch pch drain to source voltage v dss 60 ?0 v gate to source voltage v gss 20 20 v drain current i d 8 8a drain peak current i d(pulse) note1 32 ?2 a body-drain diode reverse drain current i dr 8 8a channel dissipation pch (tc = 25 c) note2 28 w channel dissipation pch note2 4.0 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1% 2. 4 devices operation
4am17 3 electrical characteristics (ta = 25 c) ( n channel ) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60vi d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20vi g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.5 v v ds = 10 v, i d = 1 ma static drain to source on state r ds(on) 0.13 0.17 w i d = 4 a, v gs = 10 v note3 resistance r ds(on) 0.19 0.24 w i d = 4 a, v gs = 4 v note3 forward transfer admittance |y fs | 3.5 5.5 s i d = 4 a, v ds = 10 v note3 input capacitance ciss 33 pf v ds = 10 v output capacitance coss 220 pf v gs = 0 reverse transfer capacitance crss 5.2 pf f = 1 mhz gate series resistance rg 1.5 k w v d s = 10 v, v gs = 0 f = 1 mhz turn-on delay time t d(on) 0.15 ns v gs = 10 v, i d = 4 a rise time t r 0.5 ns r l = 7.5 w turn-off delay time t d(off) 3.2 ns fall time t f 1.4 ns body?rain diode forward voltage v df 1.5 v i f = 8 a, v gs = 0 body?rain diode reverse recovery time t rr 850 ns i f = 8 a, v gs = 0 dif/ dt = 50 a/ m s note: 3. pulse test
4am17 4 ( p channel ) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?0 v i d = ?0 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ?50 m av ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.5 v v ds = ?0 v, i d = ? ma static drain to source on state r ds(on) 0.15 0.2 w i d = ? a, v gs = ?0 v note3 resistance r ds(on) 0.2 0.27 w i d = ? a, v gs = ? v note3 forward transfer admittance |y fs | 3.5 6.0 s i d = ? a, v ds = ?0 v note3 input capacitance ciss 17 pf v ds = ?0 v output capacitance coss 460 pf v gs = 0 reverse transfer capacitance crss 1.2 pf f = 1 mhz gate series resistance rg 3.2 k w v ds = 0, v gs = 0 f = 1 mhz turn-on delay time t d(on) 0.6 ns v gs = ?0 v, i d = ? a rise time t r 2.1 ns r l = 7.5 w turn-off delay time t d(off) ?2 ns fall time t f 5.8 ns body?rain diode forward voltage v df ?.2 v i f = ? a, v gs = 0 body?rain diode reverse recovery time t rr 2.5 ns i f = ? a, v gs = 0 dif/ dt = 50 a/ m s note: 3. pulse test
4am17 5 main characteristics 6 5 4 3 2 1 0 collector power dissipation pc (w) 50 100 150 125 ambient temperature tc (?) 75 25 4 device operation 3 device operation 2 device operation 1 device operation each die is is idetical condition : channel dissipation of maximum channel dissipation curve 60 20 10 0 collector power dissipation pc (w) 50 100 150 125 case temperature tc (?) 75 25 4 device operation 3 device operation 2 device operation 1 device operation each die is is idetical condition : channel dissipation of maximum channel dissipation curve 50 drain to source voltage v (v) ds drain current i (a) d maximum safe operation area (n?hannel) 10 1 0.1 0.05 0.1 0.3 1 3 10 30 100 100 ? pw = 10 ms (1shot) operation in this area is limited by r ds(on) 10 ? ta = 25 ? 1 ms dc operation (tc = 25 ?) 20 2 0.2 0.5 5 ?0 drain to source voltage v (v) ds drain current i (a) d maximum safe operation area (p?hannel) ?0 ? ?.1 ?.05 ?.1 ?.3 ? ? ?0 ?0 ?00 100 ? pw = 10 ms (1shot) operation in this area is limited by r ds(on) 10 ? ta = 25 ? 1 ms dc operation (tc = 25 ?) ?0 ? ?.2 ?.5 ?
4am17 6 package dimensions unit: mm 31.0 ?0.3 0.85 ?0.1 1.4 2.54 4.0 ?0.2 1.5 ?0.2 0.55 10.0 ?0.3 10.5 ?0.5 2.7 12 34 56789101112 +0.1 ?.06 hitachi code jedec eiaj sp-12 hitachi code jedec eiaj
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